Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
RSQ025P03TR ROHM Semiconductor	MOSFET P-CH 30V 2.5A TSMT6	0
R6024KNX ROHM Semiconductor	MOSFET N-CH 600V 24A TO220FM	350
RRL025P03FRATR ROHM Semiconductor	MOSFET P-CH 30V 2.5A TUMT6	2900
R5016FNJTL ROHM Semiconductor	MOSFET N-CH 500V 16A LPT	816
R6515ENJTL ROHM Semiconductor	MOSFET N-CH 650V 15A LPTS	100
RS1E150GNTB ROHM Semiconductor	MOSFET N-CH 30V 15A 8HSOP	1949
RD3G03BATTL1 ROHM Semiconductor	PCH -40V -35A POWER MOSFET - RD3	100
RSH090N03TB1 ROHM Semiconductor	MOSFET N-CH 30V 9A SOP8	2410
RT1A060APTR ROHM Semiconductor	MOSFET P-CH 12V 6A 8TSST	124
RTQ045N03HZGTR ROHM Semiconductor	MOSFET N-CH 30V 4.5A TSMT6	2747
RZR020P01TL ROHM Semiconductor	MOSFET P-CH 12V 2A TSMT3	4400
RCX081N20 ROHM Semiconductor	MOSFET N-CH 200V 8A TO220FM	292
R6004ENJTL ROHM Semiconductor	MOSFET N-CH 600V 4A LPTS	638
RQ3E120BNTB ROHM Semiconductor	MOSFET N-CH 30V 12A 8HSMT	70
RQ5E040RPTL ROHM Semiconductor	MOSFET P-CH 30V 4A TSMT3	1681
RE1E002SPTCL ROHM Semiconductor	MOSFET P-CH 30V 250MA EMT3F	0
RTF016N05TL ROHM Semiconductor	MOSFET N-CH 45V 1.6A TUMT3	7186
RW1C026ZPT2CR ROHM Semiconductor	MOSFET P-CH 20V 2.5A 6WEMT	7900
RSQ020N03HZGTR ROHM Semiconductor	MOSFET N-CH 30V 2A TSMT6	2747
RTF025N03TL ROHM Semiconductor	MOSFET N-CH 30V 2.5A TUMT3	3110

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS