Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
SCT3160KLGC11 ROHM Semiconductor	SICFET N-CH 1200V 17A TO247N	5760
RQ3L090GNTB ROHM Semiconductor	MOSFET N-CH 60V 9A/30A 8HSMT	0
R6020ANX ROHM Semiconductor	MOSFET N-CH 600V 20A TO220FM	938
RQ5E040TNTL ROHM Semiconductor	MOSFET N-CH 30V 4A TSMT3	8691
RQ5E040AJTCL ROHM Semiconductor	MOSFET N-CH 30V 4A TSMT3	1435
RSR015P06HZGTL ROHM Semiconductor	MOSFET P-CH 60V 1.5A TSMT3	1917
RSF014N03TL ROHM Semiconductor	MOSFET N-CH 30V 1.4A TUMT3	5971
RCD050N20TL ROHM Semiconductor	MOSFET N-CH 200V 5A CPT3	0
RCJ510N25TL ROHM Semiconductor	MOSFET N-CH 250V 51A LPTS	1933
RZL025P01TR ROHM Semiconductor	MOSFET P-CH 12V 2.5A TUMT6	2760
RS1E180BNTB ROHM Semiconductor	MOSFET N-CHANNEL 30V 60A 8-HSOP	2185
RTR020N05HZGTL ROHM Semiconductor	MOSFET N-CH 45V 2A TSMT3	1126
RQ3E120GNTB ROHM Semiconductor	MOSFET N-CH 30V 12A 8HSMT	0
RD3L220SNFRATL ROHM Semiconductor	MOSFET N-CH 60V 22A TO252	2410
RQ3G100GNTB ROHM Semiconductor	MOSFET N-CH 40V 10A 8HSMT	2147
RRR040P03TL ROHM Semiconductor	MOSFET P-CH 30V 4A TSMT3	9540
RZQ050P01TR ROHM Semiconductor	MOSFET P-CH 12V 5A TSMT6	638
R5011ANX ROHM Semiconductor	MOSFET N-CH 500V 11A TO220FM	460
RQ5H025TNTL ROHM Semiconductor	MOSFET N-CH 45V 2.5A TSMT3	1085
RQ3E080GNTB ROHM Semiconductor	MOSFET N-CH 30V 8A 8HSMT	611

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS