Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
RTR025P02HZGTL ROHM Semiconductor	MOSFET P-CH 20V 2.5A TSMT3	2859
RF4E110GNTR ROHM Semiconductor	MOSFET N-CH 30V 11A HUML2020L8	1864
SCT3017ALHRC11 ROHM Semiconductor	SICFET N-CH 650V 118A TO247N	637
RS1G180MNTB ROHM Semiconductor	MOSFET N-CH 40V 18A/80A 8HSOP	2490
RZQ045P01TR ROHM Semiconductor	MOSFET P-CH 12V 4.5A TSMT6	5351
RV2C010UNT2L ROHM Semiconductor	MOSFET N-CH 20V 1A DFN1006-3	1753
RS3L110ATTB1 ROHM Semiconductor	PCH -60V -11A POWER MOSFET - RS3	0
RSD160P05TL ROHM Semiconductor	MOSFET P-CH 45V 16A CPT3	2022
RQ5E025TNTL ROHM Semiconductor	MOSFET N-CH 30V 2.5A TSMT3	11750
RD3G01BATTL1 ROHM Semiconductor	PCH -40V -15A POWER MOSFET - RD3	0
RCX700N20 ROHM Semiconductor	MOSFET N-CH 200V 70A TO220FM	322
RQ1E050RPTR ROHM Semiconductor	MOSFET P-CH 30V 5A TSMT8	2659
R6024ENJTL ROHM Semiconductor	MOSFET N-CH 600V 24A LPTS	294
RSF010P03TL ROHM Semiconductor	MOSFET P-CH 30V 1A TUMT3	2799
RS1P600BETB1 ROHM Semiconductor	MOSFET N-CH 100V 17.5A/60A 8HSOP	2226
RRL025P03TR ROHM Semiconductor	MOSFET P-CH 30V 2.5A TUMT6	3658
RQ5A025ZPTL ROHM Semiconductor	MOSFET P-CH 12V 2.5A TSMT3	2678
R5013ANJTL ROHM Semiconductor	MOSFET N-CH 500V 13A LPTS	0
RUM002N05T2L ROHM Semiconductor	MOSFET N-CH 50V 200MA VMT3	67392
R6050JNZ4C13 ROHM Semiconductor	MOSFET N-CH 600V 50A TO247G	596

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS