Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
RTQ020N03TR ROHM Semiconductor	MOSFET N-CH 30V 2A TSMT6	2488
RRH090P03GZETB ROHM Semiconductor	MOSFET P-CH 30V 9A 8SOP	2062
RQ1A060ZPTR ROHM Semiconductor	MOSFET P-CH 12V 6A TSMT8	47503
RUL035N02TR ROHM Semiconductor	MOSFET N-CH 20V 3.5A TUMT6	910
RQ1C075UNTR ROHM Semiconductor	MOSFET N-CH 20V 7.5A TSMT8	2468
RF4E110BNTR ROHM Semiconductor	MOSFET N-CH 30V 11A HUML2020L8	2559
SCH2080KEC ROHM Semiconductor	SICFET N-CH 1200V 40A TO247	1088
RUM001L02T2CL ROHM Semiconductor	MOSFET N-CH 20V 100MA VMT3	71385
RV8L002SNHZGG2CR ROHM Semiconductor	MOSFET N-CH 60V 250MA DFN1010-3W	70
RS3E180ATTB1 ROHM Semiconductor	MOSFET P-CH 30V 18A 8SOP	2450
SCT3105KRC14 ROHM Semiconductor	SICFET N-CH 1200V 24A TO247-4L	281
RW1A025APT2CR ROHM Semiconductor	MOSFET P-CH 12V 2.5A WEMT6	2465
RSQ045N03HZGTR ROHM Semiconductor	MOSFET N-CH 30V 4.5A TSMT6	885
RUQ050N02TR ROHM Semiconductor	MOSFET N-CH 20V 5A TSMT6	3955
RTU002P02T106 ROHM Semiconductor	MOSFET P-CH 20V 250MA UMT3	465
RP1E090RPTR ROHM Semiconductor	MOSFET P-CH 30V 9A MPT6	591
R6076ENZ4C13 ROHM Semiconductor	MOSFET N-CH 600V 76A TO247	601
R5011ANJTL ROHM Semiconductor	MOSFET N-CH 500V 11A LPTS	0
RCJ330N25TL ROHM Semiconductor	MOSFET N-CH 250V 33A LPTS	1569
SCT3022KLHRC11 ROHM Semiconductor	SICFET N-CH 1200V 95A TO247N	701

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS