RF4E110BNTR

Manufacturer Part RF4E110BNTR
Manufacturer ROHM Semiconductor
Description MOSFET N-CH 30V 11A HUML2020L8
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet RF4E110BNTR PDF
Availability 2559 pieces
Shipped from HK warehouse
Expected Shipping Dec 16 - Dec 20 2025
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Product Attributes
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:11.1mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:HUML2020L8
Package / Case:8-PowerUDFN
More Information
RF4E110BNTR
RF4E110BNTR
ROHM Semiconductor RF4E110BNTR is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
RF4E110BNTR PDF
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MOSFET N-CH 30V 11A HUML2020L8

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