RQ3E100MNTB1

Manufacturer Part RQ3E100MNTB1
Manufacturer ROHM Semiconductor
Description MOSFET N-CH 30V 10A HSMT8
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet RQ3E100MNTB1 PDF
Availability 5286 pieces
Shipped from HK warehouse
Expected Shipping Dec 12 - Dec 16 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:*
Package:Tape & Reel (TR)Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:12.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:9.9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:520 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HSMT (3.2x3)
Package / Case:8-PowerVDFN
More Information
RQ3E100MNTB1
RQ3E100MNTB1
ROHM Semiconductor RQ3E100MNTB1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
RQ3E100MNTB1 PDF
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