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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AOD3N50

AOD3N50

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 2.8A TO252

0
AOW11N60

AOW11N60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 11A TO262

796
AOTF4N60L

AOTF4N60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 600V 4A TO220F

149
AOD2N100

AOD2N100

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 1000V 2A TO252

0
AOT2610L

AOT2610L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 9A/55A TO220

0
AOI5N40

AOI5N40

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 400V 4.2A TO251A

0
AOD508

AOD508

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 22A/70A TO252

209
AOTF8N50

AOTF8N50

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 8A TO220-3F

0
AOD2810

AOD2810

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 80V 10.5A/46A TO252

0
AOB482L

AOB482L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 80V 11A/105A TO263

15
AOT482L

AOT482L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 80V 11A/105A TO220

0
AOSP32368

AOSP32368

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 16A 8SOIC

2579
AO3162

AO3162

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 34MA SOT23

0
AOW20S60

AOW20S60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 20A TO262

0
AOT380A60L

AOT380A60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 11A TO220

991
AO4402G

AO4402G

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 20V 20A 8SOIC

0
AOTF256L

AOTF256L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 150V 3A/12A TO220-3F

0
AOSS21319C

AOSS21319C

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 2.8A SOT23-3

305
AOD4504

AOD4504

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 200V 1.5A/6A TO252

0
AOSP32320C

AOSP32320C

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 8.5A 8SOIC

2859

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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