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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AOTF2606L

AOTF2606L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 13A/54A TO220-3F

0
AON6403

AON6403

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 21A/85A 8DFN

0
AOTF2916L

AOTF2916L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 5A/17A TO220-3F

0
AOK53S60

AOK53S60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 53A TO247

0
AONR32320C

AONR32320C

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 9.5A/12A 8DFN

1185
AOW190A60C

AOW190A60C

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 20A TO262

999
AOT260L

AOT260L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 20A/140A TO220

999
AOK27S60L

AOK27S60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 27A TO247

0
AON6572

AON6572

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 36A/85A 8DFN

0
AOT280L

AOT280L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 80V 20.5A/140A TO220

0
AOD442

AOD442

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 7A/37A TO252

24242
AON6284

AON6284

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 80V 24A/78A 8DFN

0
AOT29S50L

AOT29S50L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 29A TO220

0
AOK095A60

AOK095A60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 38A TO247

181
AO4407A

AO4407A

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 12A 8SOIC

20666
AON1605

AON1605

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 20V 700MA 3DFN

0
AOTF600A70L

AOTF600A70L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 8.5A TO220F

799
AON6502

AON6502

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 49A/85A 8DFN

2953
AOWF296

AOWF296

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 37A TO262F

0
AOB1608L

AOB1608L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 11A/140A TO263

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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