ample-chip ample-chip
RFQ
BOM

Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AON6448

AON6448

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 80V 11A/65A 8DFN

429
AOB2904

AOB2904

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 120A TO263

0
AO6402A

AO6402A

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 7.5A 6TSOP

0
AON7405

AON7405

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 25A/50A 8DFN

0
AOD418

AOD418

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 13.5A/36A TO252

0
AOD4126

AOD4126

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 7.5A/43A TO252

28
AO3415A

AO3415A

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 20V 5A SOT23-3L

26
AOI2N60A

AOI2N60A

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 2A TO251A

0
AOWF600A70

AOWF600A70

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 8.5A TO262F

999
AOD2610E

AOD2610E

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 46A TO252

0
AOL1454G

AOL1454G

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 25A/46A ULTRASO8

0
AOT22N50L

AOT22N50L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 22A TO220

0
AONS21321

AONS21321

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 14A/24A 8DFN

0
AON7538

AON7538

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 23A/30A 8DFN

0
AOB288L

AOB288L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 80V 10.5A/46A TO263

0
AOT8N65

AOT8N65

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 8A TO220

0
AOWF14N50

AOWF14N50

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 14A TO262F

0
AOTF2910L

AOTF2910L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 22A TO220-3F

481
AON6482

AON6482

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 5.5A/28A 8DFN

3574
AOTF5N100

AOTF5N100

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 1000V 4A TO220-3F

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

RFQ BOM Call Skype Email
Top