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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AO4453

AO4453

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 12V 9A 8SOIC

0
AOI7N60

AOI7N60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 7A TO251A

0
AOTL66608

AOTL66608

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 73.5A/400A TOLLA

8468
AON6510

AON6510

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 28A/32A 8DFN

432
AOTS21115C

AOTS21115C

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 20V 6.6A 6TSOP

2625
AON6796

AON6796

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 32A/70A 8DFN

0
AOTF290L

AOTF290L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 72A TO220F

0
AO7413

AO7413

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 20V 1.4A SC70-3

0
AOW2500

AOW2500

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 150V 11.5/152A TO262

0
AO4459

AO4459

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 6.5A 8SOIC

0
AOD516

AOD516

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 18A/46A TO252

0
AOTF13N50

AOTF13N50

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 13A TO220-3F

0
AOTF125A60L

AOTF125A60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 28A TO220F

939
AOB286L

AOB286L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 80V 13A/70A TO263

0
AOT8N50

AOT8N50

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 8A TO220

713
AOK60N30L

AOK60N30L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 300V 60A TO247

1358
AON6162

AON6162

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 60V 100A 8DFN

0
AON4421

AON4421

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 8A 8DFN

0
AOT7N60

AOT7N60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 7A TO220

0
AOD464

AOD464

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 105V 40A TO252

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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