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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AONV210A60

AONV210A60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 4.1A/20A 4DFN

3479
AOD413A

AOD413A

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 40V 12A TO252

0
AOSS32338C

AOSS32338C

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 4A SOT23-3

918
AO4566

AO4566

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 12A 8SOIC

0
AOTF7S60L

AOTF7S60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 7A TO220-3F

0
AOTF280A60L

AOTF280A60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 14A TO220F

994
AOD3N80

AOD3N80

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 800V 2.8A TO252

2219
AON6276

AON6276

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 80V 100A 8DFN

0
AONS66920

AONS66920

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 17.5A/48A 8DFN

0
AOI600A60

AOI600A60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 8A TO251A

0
AOT7N65

AOT7N65

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 7A TO220

0
AONR36368

AONR36368

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 23A/32A 8DFN

0
AOWF11S60

AOWF11S60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 11A TO262F

0
AOW29S50

AOW29S50

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 29A TO262

0
AOTF12N60

AOTF12N60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 12A TO220-3F

0
AOD442G

AOD442G

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 13A/40A TO252

2339
AO3415

AO3415

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 20V 4A SOT23-3L

0
AOTF8N80

AOTF8N80

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 800V 7.4A TO220-3F

0
AOT3N100

AOT3N100

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 1000V 2.8A TO220

0
AOD600A70

AOD600A70

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 8.5A TO252

2474

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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