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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AO7417

AO7417

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 20V 1.9A SC70-6

0
AOT5N50

AOT5N50

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 5A TO220

19
AOU3N60

AOU3N60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 2.5A TO251-3

0
AOT290L

AOT290L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 18A/140A TO220

0
AOD9T40P

AOD9T40P

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 400V 6.6A TO252

0
AOI294A

AOI294A

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 55A TO251A

0
AOB190A60L

AOB190A60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 20A TO263

12
AON7508

AON7508

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 26A/32A 8DFN

32498
AON2260

AON2260

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 6A 6DFN

0
AOD9N40

AOD9N40

Alpha and Omega Semiconductor, Inc.

MOSFET N CH 400V 8A TO252

0
AOT254L

AOT254L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 150V 4.2A/32A TO220

0
AOWF15S60

AOWF15S60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 15A TO262F

0
AOT360A70L

AOT360A70L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 12A TO220

786
AOT8N80L

AOT8N80L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 800V 7.4A TO220

0
AOWF20S60

AOWF20S60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 20A TO262F

0
AOD514

AOD514

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 17A/46A TO252

0
AON7232

AON7232

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 100V 37A 8DFN

0
AON6312

AON6312

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 30V 85A 8DFN

0
AO3423

AO3423

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 20V 2A SOT23-3L

602
AOW11S60

AOW11S60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 11A TO262

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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