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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AON6262E

AON6262E

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 40A 8DFN

0
AON7544

AON7544

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 30V 30A 8DFN

0
AOTF12T60PL

AOTF12T60PL

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 12A TO220-3F

846
AOT190A60L

AOT190A60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V TO220-3

994
AON6548

AON6548

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 52A/85A 8DFN

0
AON6756

AON6756

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 47A/36A 8DFN

0
AOB282L

AOB282L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 80V 18.5A/105A TO263

0
AOT160A60L

AOT160A60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 24A TO220

996
AON2290

AON2290

Alpha and Omega Semiconductor, Inc.

MOSFET N CH 100V 4.5A DFN 2X2B

11847
AO4449

AO4449

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 7A 8SOIC

0
AOB15S60L

AOB15S60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 15A TO263

0
AONS32310

AONS32310

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 60A/400A 8DFN

2203
AO6404

AO6404

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 20V 8.6A 6TSOP

3543
AOV11S60

AOV11S60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 650MA/8A 4DFN

0
AOH3106

AOH3106

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 2A SOT223

0
AONS36346

AONS36346

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 26.5A/60A 8DFN

0
AON6382

AON6382

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 30V 85A 8DFN

0
AON7404G

AON7404G

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 20V 20A/20A 8DFN

0
AOUS66416

AOUS66416

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 33A/69A ULTRASO8

2995
AOT380A60CL

AOT380A60CL

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 11A TO220

699

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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