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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AOL1404G

AOL1404G

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 20V 30A/46A ULTRASO8

0
AO4752

AO4752

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 15A 8SOIC

1396
AOT2904

AOT2904

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 120A TO220

0
AON6290

AON6290

Alpha and Omega Semiconductor, Inc.

MOSFET N CH 100V 28A DFN5X6

8919
AON4703

AON4703

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 20V 3.4A 8DFN

0
AOD4130

AOD4130

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 6.5A/30A TO252

14131
AON7280

AON7280

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 80V 20A/50A 8DFN

0
AO3419

AO3419

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 20V 3.5A SOT23-3L

2944
AOT66613L

AOT66613L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 44.5A/120A TO220

981
AOD538

AOD538

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 34A/70A TO252

0
AO4576

AO4576

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 20A 8SOIC

211
AOI296A

AOI296A

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 70A TO251A

0
AO3434A

AO3434A

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 4A SOT23-3L

8205
AOW7S65

AOW7S65

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 7A TO262

0
AOWF4S60

AOWF4S60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 4A TO262F

0
AON2240

AON2240

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 8A 6DFN

0
AO4404B

AO4404B

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 8.5A 8SOIC

0
AOSS21115C

AOSS21115C

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 20V 4.5A SOT23-3

0
AON6284A

AON6284A

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 80V 48A 8DFN

0
AOW12N60

AOW12N60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 12A TO262

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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