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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AOTF5N50FD

AOTF5N50FD

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 5A TO220-3F

0
AO6405

AO6405

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 5A 6TSOP

15709
AO4492

AO4492

Alpha and Omega Semiconductor, Inc.

MOSFET N CH 30V 14A 8SOIC

0
AON1606

AON1606

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 20V 700MA 3DFN

0
AOTF7T60PL

AOTF7T60PL

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 7A TO220-3F

858
AON7409

AON7409

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 16A/32A 8DFN

0
AOTF600A60L

AOTF600A60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 8A TO220F

999
AO3418

AO3418

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 3.8A SOT23-3L

22267
AOH3254

AOH3254

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 150V 5A SOT223-4

0
AONS21357

AONS21357

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 21A/36A 8DFN

0
AON6268

AON6268

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 44A 8DFN

3247
AON6792

AON6792

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 44A/85A 8DFN

5403
AON6558

AON6558

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 25A/28A 8DFN

943
AOB256L

AOB256L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 150V 3A/19A TO263

0
AO4296

AO4296

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 13.5A 8SOIC

0
AOT190A60CL

AOT190A60CL

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 20A TO220

976
AO4406A

AO4406A

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 13A 8SOIC

0
AO4264E

AO4264E

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 60V 13.5A 8SO

0
AON7534

AON7534

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 20A/30A 8DFN

0
AOW284

AOW284

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 80V 15A/105A TO262

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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