ample-chip ample-chip
RFQ
BOM

Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AOD3N60

AOD3N60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 2.5A TO252

162
AON7318

AON7318

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 36.5A/50A 8DFN

0
AOT15S60L

AOT15S60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 15A TO220

0
AOTF190A60CL

AOTF190A60CL

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 20A TO220F

811
AOSP21321

AOSP21321

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 11A 8SOIC

0
AON7516

AON7516

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 20A/30A 8DFN

0
AON6435

AON6435

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 12A/34A 8DFN

0
AON7422G

AON7422G

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 30V 32A 8DFN

0
AOTF12T50PL

AOTF12T50PL

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 12A TO220-3F

0
AOD3N40

AOD3N40

Alpha and Omega Semiconductor, Inc.

MOSFET N CH 400V 2.6A TO252

0
AON6282

AON6282

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 80V 26.5A/85A 8DFN

0
AOT1N60

AOT1N60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 1.3A TO220

572
AON6234

AON6234

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 20A/85A 8DFN

0
AOB280A60L

AOB280A60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 14A TO263

800
AOTF66613L

AOTF66613L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 44.5A/90A TO220F

999
AOTF7S65

AOTF7S65

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 7A TO220-3F

0
AOD4N60

AOD4N60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 4A TO252

0
AO4476A

AO4476A

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 15A 8SO

266
AO4482

AO4482

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 6A 8SOIC

0
AON7502

AON7502

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 21A/30A 8DFN

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

RFQ BOM Call Skype Email
Top