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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AOT292L

AOT292L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 105A TO220

0
AOT7S60L

AOT7S60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 7A TO220

0
AOD950A70

AOD950A70

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 5A TO252

2326
AOB600A70L

AOB600A70L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 8.5A TO263

800
AOT125A60L

AOT125A60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 28A TO220

944
AOB266L

AOB266L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 18A/140A TO263

0
AO4441

AO4441

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 60V 4A 8SOIC

0
AOWF125A60

AOWF125A60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 28A TO262F

999
AO4485

AO4485

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 40V 10A 8SOIC

8943
AON6160

AON6160

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 60V 100A 8DFN

0
AON6278

AON6278

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 80V 34A/85A 8DFN

1015
AOW15S65

AOW15S65

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 15A TO262

0
AON2420

AON2420

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 8A 6DFN

0
AON7428

AON7428

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 34A/50A 8DFN

0
AOUS66923

AOUS66923

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 16.5A ULTRASO-8

2981
AONS32100

AONS32100

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 25V 73A/400A 8DFN

3624
AO3422

AO3422

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 55V 2.1A SOT23-3L

0
AON3419

AON3419

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 10A 8DFN

0
AO3401A

AO3401A

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 4A SOT23-3L

0
AON7262E

AON7262E

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 21A/34A 8DFN

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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