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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AOB2606L

AOB2606L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 13A/72A TO263

0
AOD21357

AOD21357

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 70A TO252

0
AONR21357

AONR21357

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 21A/34A 8DFN

0
AOB4184

AOB4184

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 12A/50A TO263

0
AOD417

AOD417

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 25A TO252

0
AON6220

AON6220

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 100V 48A 8DFN

0
AO6403

AO6403

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 6A 6TSOP

0
AON7240

AON7240

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 19A/40A 8DFN

0
AOI2610E

AOI2610E

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 46A TO251A

0
AO3400A

AO3400A

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 5.7A SOT23-3L

0
AOWF190A60C

AOWF190A60C

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 20A TO262F

999
AOD468

AOD468

Alpha and Omega Semiconductor, Inc.

MOSFET N CH 300V 11.5A TO252

0
AOTF66920L

AOTF66920L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 22.5/41A TO220F

823
AOWF600A70F

AOWF600A70F

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 8.5A TO262F

999
AOD458

AOD458

Alpha and Omega Semiconductor, Inc.

MOSFET N CH 250V 14A TO252

0
AOB14N50

AOB14N50

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 14A TO263

0
AOD4186

AOD4186

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 10A/35A TO252

0
AOT1608L

AOT1608L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 11A/140A TO220

0
AOB600A70FL

AOB600A70FL

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 8.5A TO263

800
AOTF11N70

AOTF11N70

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 11A TO220-3F

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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