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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AON6512

AON6512

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 54A/150A 8DFN

0
AOTF20S60L

AOTF20S60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 20A TO220-3F

542
AO7410

AO7410

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 1.7A SC70-3

0
AONS32304

AONS32304

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 40A/140A 8DFN

3485
AOD423

AOD423

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 15A/70A TO252

0
AON7528

AON7528

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 45A/50A 8DFN

0
AOTF42S60L

AOTF42S60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 39A TO220-3F

33
AON7380

AON7380

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 24A 8DFN

0
AON6292

AON6292

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 24A/85A 8DFN

0
AOT288L

AOT288L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 80V 10.5A/46A TO220

0
AOTF15S65L

AOTF15S65L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 15A TO220-3F

390
AOWF15S65

AOWF15S65

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 15A TO262F

0
AO6400

AO6400

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 6.9A 6TSOP

0
AOI4126

AOI4126

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 7.5A/43A TO251A

0
AOD380A60C

AOD380A60C

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 11A TO252

2500
AOI4N60

AOI4N60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 4A TO251A

0
AOD2544

AOD2544

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 150V 6.5A/23A TO252

15
AOUS66414

AOUS66414

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 40A/92A ULTRASO8

2989
AOD600A70R

AOD600A70R

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 8.5A TO252

2500
AON7460

AON7460

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 300V 1.2A/4A 8DFN

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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