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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AOSS21311C

AOSS21311C

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 4.3A SOT23-3

0
AON6407

AON6407

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 32A/85A 8DFN

1125
AON6452

AON6452

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 6.5A/26A 8DFN

364
AO4402

AO4402

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 20V 20A 8SOIC

14339
AON6500

AON6500

Alpha and Omega Semiconductor, Inc.

MOSFET N CH 30V 71A DFN5X6

3374
AO4443

AO4443

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 40V 6A 8SOIC

0
AON6590

AON6590

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 67A/100A 8DFN

0
AONR66406

AONR66406

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 22A/30A 8DFN

0
AOB600A60L

AOB600A60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 8A TO263

800
AON7296

AON7296

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 5A/12.5A 8DFN

0
AO3421

AO3421

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 2.6A SOT23-3L

0
AO6420

AO6420

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 4.2A 6TSOP

0
AOD2910E

AOD2910E

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 37A TO252

0
AO4447A

AO4447A

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 17A 8SOIC

2776
AON7440

AON7440

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 28A/50A 8DFN

0
AOWF11N60

AOWF11N60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 11A TO262F

0
AOB409L

AOB409L

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 60V 5A/31.5A TO263

0
AOW25S65

AOW25S65

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 25A TO262

0
AON6522

AON6522

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 25V 71A/200A 8DFN

0
AON7140

AON7140

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 40V 50A 8DFN

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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