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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AO4411

AO4411

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 8A 8SOIC

14000
AOI4184

AOI4184

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 12A/50A TO251A

0
AOU4S60

AOU4S60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 4A TO251-3

0
AOT5N100

AOT5N100

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 1000V 4A TO220

0
AOT4N60

AOT4N60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 4A TO220

0
AO3435

AO3435

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 20V 2.9A SOT23-3L

13943
AON7442

AON7442

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 30V 50A 8DFN

0
AON6250

AON6250

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 150V 13.5A/52A 8DFN

1070
AOTF6N90

AOTF6N90

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 900V 6A TO220-3F

0
AON1634

AON1634

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 4A 6DFN

0
AOSP21307

AOSP21307

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 14A 8SOIC

0
AOD1R4A70

AOD1R4A70

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 3.8A TO252

2446
AON6576

AON6576

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 26A/32A 8DFN

0
AO3442

AO3442

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 1A SOT23-3L

36
AONR21117

AONR21117

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 20V 26.5A/34A 8DFN

10227
AON7400B

AON7400B

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 18A/40A 8DFN

0
AO7411

AO7411

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 20V 1.8A SC70-6

0
AOWF4N60

AOWF4N60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 4A TO262F

0
AOT7N70

AOT7N70

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 7A TO220

0
AON7458

AON7458

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 250V 1.5A/5A 8DFN

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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