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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AOTF3N80

AOTF3N80

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 800V 2.8A TO220-3F

0
AO6415

AO6415

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 20V 3.3A 6TSOP

2063
AOT264L

AOT264L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 19A/140A TO220

0
AON7418

AON7418

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 46A/50A 8DFN

0
AOD296A

AOD296A

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 70A TO252

0
AOWF412

AOWF412

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 7.8A/30A

0
AONR32314

AONR32314

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 17A/30A 8DFN

0
AOSP66920

AOSP66920

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 13.5A 8SOIC

5178
AOB160A60L

AOB160A60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 24A TO263

794
AOD5N40

AOD5N40

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 400V 4.2A TO252

906
AONS66923

AONS66923

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 15A/47A 8DFN

844
AOSP32314

AOSP32314

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 14.5A 8SOIC

2225
AOTF9N70

AOTF9N70

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 9A TO220-3F

0
AOD2N60

AOD2N60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 2A TO252

0
AONS66402

AONS66402

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 49A/85A

0
AOTF240L

AOTF240L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 20A/85A TO220-3F

2671
AOD407

AOD407

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 60V 12A TO252

0
AOT13N50

AOT13N50

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 13A TO220

0
AOTL66912

AOTL66912

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 49A/380A TOLLA

0
AON6314

AON6314

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 30V 85A 8DFN

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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