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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AOT20N25L

AOT20N25L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 250V 20A TO220

0
AON6156

AON6156

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 45V 100A 8DFN

0
AOTF12N60L

AOTF12N60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 12A TO220F

5
AOWF7S65

AOWF7S65

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 7A TO262F

0
AON7230

AON7230

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 100V 47A 8DFN

0
AOTF22N50

AOTF22N50

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 22A TO220-3F

0
AOTF4185

AOTF4185

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 40V 34A TO220FL

0
AOTF4126

AOTF4126

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 6A/27A TO220-3F

0
AOTF11N60L

AOTF11N60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 11A TO220-3F

511
AON7462

AON7462

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 300V 900MA/2.5A 8DFN

0
AON6414A

AON6414A

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 13A/30A 8DFN

2540
AOWF8N50

AOWF8N50

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 8A TO262F

0
AOTF5N50

AOTF5N50

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 5A TO220-3F

0
AO7401

AO7401

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 1.4A SC70-3

2001
AON7408

AON7408

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 10A/18A 8DFN

0
AON6368

AON6368

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 25A/52A 8DFN

2595
AONR21321

AONR21321

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 24A 8DFN

0
AON6154

AON6154

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 45V 100A 8DFN

0
AOD2606

AOD2606

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 14A/46A TO252

0
AOT42S60L

AOT42S60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 37A TO220

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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