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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AOD409

AOD409

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 60V 26A TO252

0
AOT095A60L

AOT095A60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 38A TO220

992
AOD2910

AOD2910

Alpha and Omega Semiconductor, Inc.

MOSFET N CH 100V 6.5A TO252

0
AO4290A

AO4290A

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 15.5A 8SOIC

0
AOB296L

AOB296L

Alpha and Omega Semiconductor, Inc.

MOSFET N CH 100V 9.5A TO263

0
AOT284L

AOT284L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 80V 16A/105A TO220

0
AON6366E

AON6366E

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 30V 34A 8DFN

0
AOT430

AOT430

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 75V 80A TO220

0
AON6280

AON6280

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 80V 17A/85A 8DFN

0
AOB254L

AOB254L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 150V 4.2A/32A TO263

0
AONS32302

AONS32302

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 56A/220A 8DFN

2905
AON2411

AON2411

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 12V 20A 8DFN

0
AOT20N60L

AOT20N60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 20A TO220

0
AOTF380A60L

AOTF380A60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 11A TO220F

0
AOTF10N60

AOTF10N60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 10A TO220-3F

0
AOT15S65L

AOT15S65L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 15A TO220

291
AOWF12N65

AOWF12N65

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 12A TO262F

0
AOB240L

AOB240L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 20A/105A TO263

122
AOT2916L

AOT2916L

Alpha and Omega Semiconductor, Inc.

MOSFET N CH 100V 5A TO220

0
AOI442

AOI442

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 7A/37A TO251A

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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