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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AOB10N60L

AOB10N60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 10A TO263

0
AOTF11S65L

AOTF11S65L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 11A TO220-3F

0
AOTF29S50L

AOTF29S50L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 29A TO220-3F

0
AOTF9N50

AOTF9N50

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 9A TO220-3F

0
AOD7S60

AOD7S60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 7A TO252

4424
AOB29S50L

AOB29S50L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 29A TO263

185
AON6794

AON6794

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 39A/85A 8DFN

2743
AON6358

AON6358

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 42A/85A 8DFN

0
AON6230

AON6230

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 57.5A/85A 8DFN

0
AO4419

AO4419

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 9.7A 8SOIC

0
AON6588

AON6588

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 32A/32A 8DFN

0
AOW7S60

AOW7S60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 7A TO262

0
AOD7S65

AOD7S65

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 7A TO252

3228
AON6411

AON6411

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 20V 47A/85A 8DFN

11260
AOB20S60L

AOB20S60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 20A TO263

0
AON7400A

AON7400A

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 15A/40A 8DFN

0
AOW125A60

AOW125A60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 28A TO262

989
AOWF12T60P

AOWF12T60P

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 12A TO262F

995
AOK20N60L

AOK20N60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 20A TO247

136
AOTF3N100

AOTF3N100

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 1000V 2.8A TO220-3F

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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