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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AOI11S60

AOI11S60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 11A TO251A

0
AOT2618L

AOT2618L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 7A/23A TO220

2886
AOB9N70L

AOB9N70L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 9A TO263

0
AOTF7N60

AOTF7N60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 7A TO220-3F

0
AOTS21313C

AOTS21313C

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 7.3A 6TSOP

0
AONS66966

AONS66966

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 31.3A/100A 8DFN

1526
AOTF380A60CL

AOTF380A60CL

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 11A TO220F

0
AOTF8N65

AOTF8N65

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 8A TO220-3F

0
AO5404E

AO5404E

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 20V 500MA SC89-3

1
AONS36316

AONS36316

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 28A/32A 8DFN

2979
AOTF2610L

AOTF2610L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 9A/35A TO220-3F

0
AON6360

AON6360

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 36A/85A 8DFN

0
AOD2916

AOD2916

Alpha and Omega Semiconductor, Inc.

MOSFET N CH 100V 5.5A TO252

0
AOD4132

AOD4132

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 85A TO252

2297
AON6226

AON6226

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 100V 48A 8DFN

0
AOK29S50L

AOK29S50L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 29A TO247

0
AOI4S60

AOI4S60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 4A TO251A

0
AOTF14N50

AOTF14N50

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 14A TO220-3F

0
AON7522E

AON7522E

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 21A/34A 8DFN

0
AOT296L

AOT296L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 9.5A/70A TO220

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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