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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AOD3T40P

AOD3T40P

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 400V 2A TO252

2220
AO3402

AO3402

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 4A SOT23-3L

1482
AOD280A60

AOD280A60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 14A TO252

2497
AON2406

AON2406

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 20V 8A 6DFN

4337
AOB42S60L

AOB42S60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 37A TO263

0
AOTL66401

AOTL66401

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 82A/400A TOLLA

1527
AOW12N50

AOW12N50

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 12A TO262

0
AO6424

AO6424

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 5A 6TSOP

0
AON7404

AON7404

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 20V 20A/40A 8DFN

9830
AOTF4S60

AOTF4S60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 4A TO220-3F

0
AOTF12N65

AOTF12N65

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 12A TO220-3F

0
AOK22N50L

AOK22N50L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 22A TO247

0
AO4484

AO4484

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 10A 8SOIC

0
AOT9N50

AOT9N50

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 9A TO220

0
AOD256

AOD256

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 150V 3A/19A TO252

1397
AON6144

AON6144

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 100A 8DFN

14976
AOWF160A60

AOWF160A60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 24A TO262F

983
AOD66920

AOD66920

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 19.5A/70A TO252

0
AO3424

AO3424

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 3.8A SOT23-3L

0
AOD9N50

AOD9N50

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 9A TO252

178

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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