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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AON2410

AON2410

Alpha and Omega Semiconductor, Inc.

MOSFET N CH 30V 8A DFN 2x2B

0
AOTF8T50P

AOTF8T50P

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 8A TO220-3F

0
AOT11N70

AOT11N70

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 11A TO220

0
AON6594

AON6594

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 22A/35A 8DFN

0
AOD66923

AOD66923

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 16.5A/58A TO252

4693
AOT600A70L

AOT600A70L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 8.5A TO220

997
AOK125A60

AOK125A60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 28A TO247

209
AOSX21319C

AOSX21319C

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 2.6A SC70-6

0
AON6516

AON6516

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 27A/32A 8DFN

0
AOTF7N65

AOTF7N65

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 7A TO220-3F

0
AOTF25S65

AOTF25S65

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 25A TO220-3F

0
AOB414

AOB414

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 6.6A/51A TO263

149
AOD4189

AOD4189

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 40V 40A TO252

0
AOT66616L

AOT66616L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 38.5A/140A TO220

987
AON2403

AON2403

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 12V 8A 6DFN

0
AOT66916L

AOT66916L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 35.5/120A TO220

1496
AON6444

AON6444

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 14A/81A 8DFN

88
AOD7N65

AOD7N65

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 7A TO252

1
AO4480

AO4480

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 14A 8SOIC

50414
AOB380A60CL

AOB380A60CL

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 11A TO263

800

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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