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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AO4421

AO4421

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 60V 6.2A 8SOIC

91
AON7403

AON7403

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 11A/29A 8DFN

0
AOB27S60L

AOB27S60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 27A TO263

799
AOTF12N30

AOTF12N30

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 300V 11.5A TO220-3F

0
AOB66920L

AOB66920L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 22.5A/80A TO263

1416
AON6566

AON6566

Alpha and Omega Semiconductor, Inc.

MOSFET N CH 30V 29A 8DFN

0
AOB284L

AOB284L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 80V 16A/105A TO263

0
AO4262E

AO4262E

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 60V 16.5A 8SO

0
AOT27S60L

AOT27S60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 27A TO220

2900
AONR66922

AONR66922

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 15A/50A 8DFN

0
AON7414

AON7414

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 12.5A/20A 8DFN

0
AO4405E

AO4405E

Alpha and Omega Semiconductor, Inc.

MOSFET P-CHANNEL 30V 6A 8SOIC

0
AOT12N30L

AOT12N30L

Alpha and Omega Semiconductor, Inc.

MOSFET N CH 300V 11.5A TO220

0
AOW11S65

AOW11S65

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 11A TO262

0
AO4286

AO4286

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 4A 8SOIC

0
AOD482

AOD482

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 5A/32A TO252

0
AOB2500L

AOB2500L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 150V 11.5/152A TO263

928
AOT10N60

AOT10N60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 10A TO220

93
AO4425

AO4425

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 38V 14A 8SOIC

107871
AOTF20N40L

AOTF20N40L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 400V 20A TO220-3F

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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