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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AON6294

AON6294

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 17A/52A 8DFN

12577
AO4494

AO4494

Alpha and Omega Semiconductor, Inc.

MOSFET N CH 30V 18A 8SOIC

8397
AOY66923

AOY66923

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 16.5/58A TO251B

3137
AOTF4N60

AOTF4N60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 4A TO220-3F

0
AOD8N25

AOD8N25

Alpha and Omega Semiconductor, Inc.

MOSFET N CH 250V 8A TO252

0
AOB2910L

AOB2910L

Alpha and Omega Semiconductor, Inc.

MOSFET N CH 100V 6A TO263

0
AOW14N50

AOW14N50

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 14A TO262

0
AOD380A60

AOD380A60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 11A TO252

2481
AOT1404L

AOT1404L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 15A/220A TO220

0
AO4268

AO4268

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 60V 19A 8SOIC

0
AOI538

AOI538

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 34A/70A TO251A

0
AOD240

AOD240

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 23A/70A TO252

4523
AOTF20N60

AOTF20N60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 20A TO220-3F

0
AON6578

AON6578

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 28A/70A 8DFN

0
AON7524

AON7524

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 25A/28A 8DFN

8257
AOD450

AOD450

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 200V 3.8A TO252

0
AOT240L

AOT240L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 20A/105A TO220

230
AOI444

AOI444

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 4A/12A TO251A

0
AON6224

AON6224

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 100V 34A 8DFN

0
AOK18N65L

AOK18N65L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 18A TO247

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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