ample-chip ample-chip
RFQ
BOM

Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AON4407

AON4407

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 12V 9A 8DFN

0
AONR36366

AONR36366

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 30A/34A 8DFN

648
AO3160E

AO3160E

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 40MA SOT23A-3

5572
AON6260

AON6260

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 41A/85A 8DFN

0
AON7292

AON7292

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 9A/23A 8DFN

0
AOB270AL

AOB270AL

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 75V 21.5A/140A TO263

0
AOD424

AOD424

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 20V 18A/45A TO252

4367
AOI380A60C

AOI380A60C

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 11A TO251A

0
AOTF15S60L

AOTF15S60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 15A TO220-3F

0
AOTF260L

AOTF260L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 19A/92A TO220-3F

0
AO3420

AO3420

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 20V 6A SOT23-3L

84845
AOD66406

AOD66406

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 25A/60A TO252

0
AO3421E

AO3421E

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 3A SOT23-3L

64735
AO3407A

AO3407A

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 4.3A SOT23-3L

0
AOB25S65L

AOB25S65L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 25A TO263

961
AOB360A70L

AOB360A70L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 12A TO263

758
AO4430

AO4430

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 18A 8SOIC

637
AO3406

AO3406

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 3.6A SOT23-3L

2398
AO3413

AO3413

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 20V 3A SOT23-3L

0
AOTF9N90

AOTF9N90

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 900V 9A TO220-3F

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

RFQ BOM Call Skype Email
Top