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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AONS66612

AONS66612

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 46A/100A 8DFN

4014
AOW292

AOW292

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 105A TO262

0
AOD480

AOD480

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 25A TO252

0
AOT600A70FL

AOT600A70FL

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 8.5A TO220

999
AON7254

AON7254

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 150V 5.5A/17A 8DFN

2043
AOD600A60

AOD600A60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 8A TO252

2425
AOT480L

AOT480L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 80V 15A/180A TO220

0
AOB2502L

AOB2502L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 150V 106A TO263

0
AO6401A

AO6401A

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 5A 6TSOP

0
AOD5N50

AOD5N50

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 5A TO252

0
AON6384

AON6384

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 30V 83A 8DFN

0
AO4466

AO4466

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 10A 8SOIC

0
AO4486

AO4486

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 4.2A 8SOIC

4623
AOTF286L

AOTF286L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 80V 13.5A/56A TO220

0
AO3403

AO3403

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 2.6A SOT23-3L

4055
AON6354

AON6354

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 30V 83A 8DFN

0
AOD4184A

AOD4184A

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 13A/50A TO252

13
AOSP66923

AOSP66923

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 12A 8SOIC

6957
AOD11S60

AOD11S60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 11A TO252

6911
AOB411L

AOB411L

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 60V 8A/78A TO263

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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