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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AOD2816

AOD2816

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 80V 8.5A/35A TO252

0
AOD2N60A

AOD2N60A

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 2A TO252

33
AOTF2618L

AOTF2618L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 7A/22A TO220-3F

1124
AOT4S60L

AOT4S60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 4A TO220

0
AOWF600A60

AOWF600A60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 8A TO262F

999
AO6409A

AO6409A

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 20V 5.5A 6TSOP

497
AOTF7N60FD

AOTF7N60FD

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 7A TO220-3F

0
AOTF11S60L

AOTF11S60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 11A TO220-3F

0
AO7407

AO7407

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 20V 1.2A SC70-3

0
AOW360A70

AOW360A70

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 12A TO262

999
AOC2421

AOC2421

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 8V 2.5A 4ALPHADFN

0
AOWF360A70

AOWF360A70

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 12A TO262F

999
AO6409

AO6409

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 20V 5.5A 6TSOP

499
AOSS62934

AOSS62934

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 2A SOT23-3

18453
AON6240

AON6240

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 27A/85A 8DFN

3994
AOTF190A60L

AOTF190A60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 20A TO220F

629
AOT12N40L

AOT12N40L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 400V 11A TO220

0
AOB7S65L

AOB7S65L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 7A TO263

0
AO3451

AO3451

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 4A SOT23-3

0
AOTF360A70L

AOTF360A70L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 12A TO220F

944

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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