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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AOT2502L

AOT2502L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 150V 18.5/106A TO220

47
AON7264E

AON7264E

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 60V 28A 8DFN

0
AON6298

AON6298

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 14.5A/46A 8DFN

0
AOT16N50

AOT16N50

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 16A TO220

0
AOB1100L

AOB1100L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 8A/130A TO263

0
AO3414

AO3414

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 20V 3A SOT23-3L

0
AO3404A

AO3404A

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 5.8A SOT23-3L

682956
AOL1482

AOL1482

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 4.5A ULTRASO8

0
AO7400

AO7400

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 1.7A SC70-3

293760
AOW10N65

AOW10N65

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 10A TO262

0
AON3414

AON3414

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 10.5A 8DFN

831
AOW15S60

AOW15S60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 15A TO262

0
AON2409

AON2409

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 8A 6DFN

0
AOTF10N50FD

AOTF10N50FD

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 10A TO220-3F

0
AON7430

AON7430

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 13A/34A 8DFN

0
AOI1R4A70

AOI1R4A70

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 3.8A TO251A

3494
AOD7N60

AOD7N60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 7A TO252

0
AOT7S65L

AOT7S65L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 7A TO220

421
AON7510

AON7510

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 45A/75A 8DFN

0
AOI600A70

AOI600A70

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 8.5A TO251A

3499

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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