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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AOW66616

AOW66616

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 33A/140A TO262

956
AONS36314

AONS36314

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 36.5A/85A 8DFN

1045
AOTF3N90

AOTF3N90

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 900V 2.4A TO220-3F

0
AOI4185

AOI4185

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 40V 40A TO251A

0
AOWF9N70

AOWF9N70

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 9A TO262F

0
AOI409

AOI409

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 60V 26A TO251A

0
AOT266L

AOT266L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 18A/140A TO220

7
AOI8N25

AOI8N25

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 250V 8A TO251A

0
AOWF380A60C

AOWF380A60C

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 11A TO262F

999
AON2405

AON2405

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 20V 8A 6DFN

0
AOTF409

AOTF409

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 60V 5.4A/24A TO220FL

0
AON2408

AON2408

Alpha and Omega Semiconductor, Inc.

MOSFET N CH 20V 8A DFN 2x2B

0
AOTF160A60L

AOTF160A60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 24A TO220F

985
AON6242

AON6242

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 18.5A/85A 8DFN

8699
AO4294

AO4294

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 11.5A 8SO

1109
AOK2500L

AOK2500L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 150V 14A/180A TO247

228
AON6596

AON6596

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 20A/35A 8DFN

0
AON7410

AON7410

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 9.5A/24A 8DFN

48376
AONS36302

AONS36302

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 146A 8DFN

0
AOT410L

AOT410L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 12A/150A TO220

7401

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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