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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AOB11S65L

AOB11S65L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 11A TO263

0
AOT2142L

AOT2142L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 40V 120A TO220

0
AO4266E

AO4266E

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 60V 11A 8SO

0
AOT2910L

AOT2910L

Alpha and Omega Semiconductor, Inc.

MOSFET N CH 100V 6A TO220

0
AONS62614T

AONS62614T

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 39A/100A 8DFN

2490
AOT9N70

AOT9N70

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 9A TO220

0
AOT286L

AOT286L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 80V 13A/70A TO220

0
AON6590A

AON6590A

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 67A/100A 8DFN

0
AO4354

AO4354

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 23A 8SOIC

2
AOWF12N60

AOWF12N60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 12A TO262F

0
AOWF10N60

AOWF10N60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 10A TO262F

0
AOB290L

AOB290L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 18A/140A TO263

0
AOW10N60

AOW10N60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 10A TO262

0
AOB1404L

AOB1404L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 15A/220A TO263

0
AOD4185

AOD4185

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 40V 40A TO252

0
AOTF27S60L

AOTF27S60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 27A TO220-3F

6822
AOWF11S65

AOWF11S65

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 11A TO262F

0
AOSP21311C

AOSP21311C

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 6A 8SOIC

0
AOTF266L

AOTF266L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 18A/78A TO220-3F

198
AOW4S60

AOW4S60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 4A TO262

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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