ample-chip ample-chip
RFQ
BOM

Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AON6405

AON6405

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 15A 8DFN

0
AOD360A70

AOD360A70

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 12A TO252

2500
AO3160

AO3160

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 40MA SOT23-3

0
AO7415

AO7415

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 20V 2A SC70-6

13
AO3416

AO3416

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 20V 6.5A SOT23-3L

0
AO3401

AO3401

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 4A SOT23-3

0
AONS36348

AONS36348

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 24A/50A 8DFN

0
AOTF600A70FL

AOTF600A70FL

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 8.5A TO220F

923
AOT66920L

AOT66920L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 22.5A/80A TO220

0
AOTS21311C

AOTS21311C

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 5.9A 6TSOP

6760
AOK66613

AOK66613

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 58.5A/120A TO247

185
AON6484

AON6484

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 3.3A/12A 8DFN

0
AO4468

AO4468

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 10.5A 8SOIC

184
AOD4454

AOD4454

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 150V 3A/20A TO252

0
AOB260L

AOB260L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 20A/140A TO263

0
AOWF25S65

AOWF25S65

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 25A TO262F

0
AOD1N60

AOD1N60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 1.3A TO252

19888
AOTF7N70

AOTF7N70

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 7A TO220-3F

0
AOW12N65

AOW12N65

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 12A TO262

0
AOB15S65L

AOB15S65L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 15A TO263

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

RFQ BOM Call Skype Email
Top