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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AOWF095A60

AOWF095A60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 38A TO262F

999
AO4403

AO4403

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 6A 8SOIC

0
AOT11S65L

AOT11S65L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 11A TO220

0
AO7408

AO7408

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 20V 2A SC70-6

0
AOD4S60

AOD4S60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 4A TO252

4672
AOK160A60

AOK160A60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 24A TO247

174
AOI9N50

AOI9N50

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 9A TO251A

0
AO4292E

AO4292E

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 8A 8SOIC

0
AOB480L

AOB480L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 80V 15A/180A TO263

10
AOD454A

AOD454A

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 20A TO252

7344
AOB470L

AOB470L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 75V 10A/100A TO263

0
AONR21307

AONR21307

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 24A 8DFN

0
AON6560

AON6560

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 84A/200A 8DFN

0
AOTF292L

AOTF292L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 70A TO220F

0
AOT414

AOT414

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 5.6A/43A TO220

359
AOSP36326C

AOSP36326C

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 12A 8SOIC

22960
AOI950A70

AOI950A70

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 5A TO251A

3499
AOD478

AOD478

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 2.5A/11A TO252

0
AON7423

AON7423

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 20V 28A/50A 8DFN

0
AO7405

AO7405

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 1.4A SC70-6

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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