ample-chip ample-chip
RFQ
BOM

Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AON6236

AON6236

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 19A/30A 8DFN

185404
AOT262L

AOT262L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 20A/140A TO220

0
AOD2922

AOD2922

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 3.5A/7A TO252

141
AOI423

AOI423

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 15A/70A TO251A

0
AOK9N90

AOK9N90

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 900V 9A TO247

0
AOY2N60

AOY2N60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 2A TO251

0
AON7568

AON7568

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 25A/32A 8DFN

0
AOSP21357

AOSP21357

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 16A 8SOIC

0
AOU2N60

AOU2N60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 2A TO251-3

0
AOTF095A60L

AOTF095A60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 38A TO220F

698
AOSP21313C

AOSP21313C

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 7A 8SOIC

6000
AON7518

AON7518

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 24A 8DFN

0
AOSS32334C

AOSS32334C

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 6.2A SOT23-3

0
AOTF4N90

AOTF4N90

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 900V 4A TO220-3F

0
AOWF12N50

AOWF12N50

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 12A TO262F

0
AON6264E

AON6264E

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 28A 8DFN

0
AOD6N50

AOD6N50

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 5.3A TO252

0
AOI21357

AOI21357

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 23A/70A TO251A

9356
AOT280A60L

AOT280A60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 14A TO220

0
AOB190A60CL

AOB190A60CL

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 20A TO263

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

RFQ BOM Call Skype Email
Top