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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AOTF2142L

AOTF2142L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 112A TO220F

0
AOL1240

AOL1240

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 40V 19A/69A ULTRASO8

0
AOWF10N65

AOWF10N65

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 10A TO262F

0
AOD4286

AOD4286

Alpha and Omega Semiconductor, Inc.

MOSFET N CH 100V 4A TO252

0
AON7246E

AON7246E

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 60V 13A 8DFN

0
AOT14N50

AOT14N50

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 14A TO220

550
AOK20S60L

AOK20S60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 20A TO247

136
AON6362

AON6362

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 27A/60A 8DFN

1157
AOD2210

AOD2210

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 200V 3A/18A TO252

0
AOD444

AOD444

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 4A/12A TO252

4975
AOB4S60L

AOB4S60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 4A TO263

0
AOT2500L

AOT2500L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 150V 11.5/152A TO220

0
AOTF10N65

AOTF10N65

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 10A TO220-3F

0
AOTS21319C

AOTS21319C

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 2.7A 6TSOP

0
AOTF22N50L

AOTF22N50L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 22A TO220-3F

0
AOT10N65

AOT10N65

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 10A TO220

0
AOB292L

AOB292L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 105A TO263

0
AON7290

AON7290

Alpha and Omega Semiconductor, Inc.

MOSFET N CH 100V 15A 8DFN

0
AOB66613L

AOB66613L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 44.5A/120A TO263

0
AOTF288L

AOTF288L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 80V 10.5A/43A TO220

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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