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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AON6380

AON6380

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 24V 8DFN

0
AONS660A70F

AONS660A70F

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 1.7A/9.6A 8DFN

3000
AO4306

AO4306

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 13A 8SOIC

0
AOW296

AOW296

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 100V 70A TO262

0
AONS36306

AONS36306

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 28A/63A 8DFN

0
AONR21305C

AONR21305C

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 8DFN

0
AOSN32338C

AOSN32338C

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 3.7A SC70-3

0
AOSN21319C

AOSN21319C

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 2.6A SC70-3

0
AON6266E

AON6266E

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 60V 24A 8DFN

0
AONX36372

AONX36372

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH ASYMMETRIC

0
AOY2610E

AOY2610E

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 60V 19A TO251B

0
AOD294A

AOD294A

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 55A TO252

0
AON2392

AON2392

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 100V 8A 8DFN

0
AOTL66610

AOTL66610

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 61A/350A TOLLA

0
AONS1R6A70

AONS1R6A70

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 1.1A/4.6A 8DFN

2987
AOTL66518

AOTL66518

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 150V 214A

467
AOL1414

AOL1414

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 14A/85A ULTRASO8

0
AO5401E

AO5401E

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 20V 500MA SC89-3

0
AOT474

AOT474

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 75V 9A/127A TO220

0
AON7400AL_102

AON7400AL_102

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 15A/40A 8DFN

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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