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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AUIRF1324S-7P

AUIRF1324S-7P

IR (Infineon Technologies)

MOSFET N-CH 24V 240A TO263-7

9959
BSP135H6906XTSA1

BSP135H6906XTSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 120MA SOT223-4

172
BSC090N03LSG

BSC090N03LSG

IR (Infineon Technologies)

BSC090N03 - 12V-300V N-CHANNEL P

0
BSS169H6327XTSA1

BSS169H6327XTSA1

IR (Infineon Technologies)

MOSFET N-CH 100V 170MA SOT23-3

54989
AUIRF7734M2TR

AUIRF7734M2TR

IR (Infineon Technologies)

MOSFET N-CH 40V 17A DIRECTFET M2

4800
IRF520NSTRLPBF

IRF520NSTRLPBF

IR (Infineon Technologies)

MOSFET N-CH 100V 9.7A D2PAK

2779
IRF6619

IRF6619

IR (Infineon Technologies)

MOSFET N-CH 20V 30A DIRECTFET

14380
IPA60R280C6XKSA1

IPA60R280C6XKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 13.8A TO220-FP

0
IRFH5010TRPBF

IRFH5010TRPBF

IR (Infineon Technologies)

MOSFET N-CH 100V 13A/100A 8PQFN

0
SPP17N80C3XKSA1

SPP17N80C3XKSA1

IR (Infineon Technologies)

MOSFET N-CH 800V 17A TO220-3

5
IRFP260NPBF

IRFP260NPBF

IR (Infineon Technologies)

MOSFET N-CH 200V 50A TO247AC

1180
SPP15N60C3XKSA1

SPP15N60C3XKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 15A TO220-3

500
BSZ036NE2LSATMA1

BSZ036NE2LSATMA1

IR (Infineon Technologies)

MOSFET N-CH 25V 16A/40A TSDSON

34155
IPB048N06LG

IPB048N06LG

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

425
IRFSL7540PBF

IRFSL7540PBF

IR (Infineon Technologies)

MOSFET N-CH 60V 110A TO262

4200
SPD03N60C3ATMA1

SPD03N60C3ATMA1

IR (Infineon Technologies)

MOSFET N-CH 600V 3.2A TO252-3

0
IPB60R040CFD7ATMA1

IPB60R040CFD7ATMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 50A TO263-3-2

543
SPW07N60CFD

SPW07N60CFD

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

3133
IPD60N10S4L12ATMA1

IPD60N10S4L12ATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 60A TO252-3

0
IRFS52N15DTRRP

IRFS52N15DTRRP

IR (Infineon Technologies)

MOSFET N-CH 150V 51A D2PAK

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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