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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IPP030N10N5AKSA1

IPP030N10N5AKSA1

IR (Infineon Technologies)

MOSFET N-CH 100V 120A TO220-3

327
IPD95R1K2P7ATMA1

IPD95R1K2P7ATMA1

IR (Infineon Technologies)

MOSFET N-CH 950V 6A TO252-3

0
IPD100N06S403ATMA1

IPD100N06S403ATMA1

IR (Infineon Technologies)

MOSFET N-CH 60V 100A TO252-31

16526
SPA08N80C3XKSA1

SPA08N80C3XKSA1

IR (Infineon Technologies)

MOSFET N-CH 800V 8A TO220-FP

2268
IMW120R030M1HXKSA1

IMW120R030M1HXKSA1

IR (Infineon Technologies)

SICFET N-CH 1.2KV 56A TO247-3

668
SPD03N60S5XT

SPD03N60S5XT

IR (Infineon Technologies)

SPD03N60 - 600V COOLMOS N-CHANNE

1000
IPI70R950CEXKSA1

IPI70R950CEXKSA1

IR (Infineon Technologies)

CONSUMER

0
IPD50N06S2L13ATMA2

IPD50N06S2L13ATMA2

IR (Infineon Technologies)

MOSFET N-CH 55V 50A TO252-31

2468
AUIRFBA1405

AUIRFBA1405

IR (Infineon Technologies)

MOSFET N-CH 55V 95A SUPER-220

2024
SPP20N60C3XKSA1

SPP20N60C3XKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 20.7A TO220-3

4074
IPP90R340C3XKSA1

IPP90R340C3XKSA1

IR (Infineon Technologies)

MOSFET N-CH 900V 15A TO220-3

220
IPB80R290C3A

IPB80R290C3A

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

1745
IRFP4004PBF

IRFP4004PBF

IR (Infineon Technologies)

MOSFET N-CH 40V 195A TO247AC

1236
IRLR6225PBF

IRLR6225PBF

IR (Infineon Technologies)

MOSFET N-CH 20V 100A DPAK

1703
IMBF170R450M1XTMA1

IMBF170R450M1XTMA1

IR (Infineon Technologies)

SICFET N-CH 1700V 9.8A TO263-7

673
IPD90N04S3H4ATMA1

IPD90N04S3H4ATMA1

IR (Infineon Technologies)

OPTLMOS N-CHANNEL POWER MOSFET

43297
BSZ039N06NSATMA1

BSZ039N06NSATMA1

IR (Infineon Technologies)

MOSFET N-CH 60V 18A/40A TSDSON

0
IPI80N06S2L05AKSA2

IPI80N06S2L05AKSA2

IR (Infineon Technologies)

MOSFET N-CH 55V 80A TO262-3

26500
IRFB4127PBF

IRFB4127PBF

IR (Infineon Technologies)

MOSFET N-CH 200V 76A TO220AB

0
BSC123N10LSGATMA1

BSC123N10LSGATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 10.6/71A 8TDSON

29088

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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