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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IPN80R2K0P7ATMA1

IPN80R2K0P7ATMA1

IR (Infineon Technologies)

MOSFET N-CHANNEL 800V 3A SOT223

3957
IRFR9120NTRLPBF

IRFR9120NTRLPBF

IR (Infineon Technologies)

MOSFET P-CH 100V 6.6A DPAK

0
IRFR3709ZTRLPBF

IRFR3709ZTRLPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 86A DPAK

1280
IPD70N12S3L12ATMA1

IPD70N12S3L12ATMA1

IR (Infineon Technologies)

MOSFET N-CHANNEL_100+

0
BSZ0803LSATMA1

BSZ0803LSATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 9A/40A TSDSON

0
IPP100N08S2L07AKSA1

IPP100N08S2L07AKSA1

IR (Infineon Technologies)

MOSFET N-CH 75V 100A TO220-3

303
IRF7452PBF

IRF7452PBF

IR (Infineon Technologies)

SMPS HEXFET POWER MOSFET

0
SPB42N03S2L-13

SPB42N03S2L-13

IR (Infineon Technologies)

MOSFET N-CH 30V 42A TO263-3

230
BUZ100S

BUZ100S

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

5031
IRF150P221XKMA1

IRF150P221XKMA1

IR (Infineon Technologies)

MOSFET N-CH 150V 186A TO247-3

0
IRFB4229PBF

IRFB4229PBF

IR (Infineon Technologies)

IRFB4229 - 12V-300V N-CHANNEL PO

1410
IRFB3407ZPBF

IRFB3407ZPBF

IR (Infineon Technologies)

MOSFET N-CH 75V 120A TO220AB

0
IPP90N06S404AKSA1

IPP90N06S404AKSA1

IR (Infineon Technologies)

MOSFET N-CH 60V 90A TO220-3

14000
IPP80N06S209AKSA1

IPP80N06S209AKSA1

IR (Infineon Technologies)

MOSFET N-CH 55V 80A TO220-3-1

0
IRL2910STRLPBF

IRL2910STRLPBF

IR (Infineon Technologies)

MOSFET N-CH 100V 55A D2PAK

2176
IRFHS9301TRPBF

IRFHS9301TRPBF

IR (Infineon Technologies)

MOSFET P-CH 30V 6A/13A 6PQFN

12989
IPP60R280P6XKSA1

IPP60R280P6XKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 13.8A TO220-3

441
IPB60R125CPATMA1

IPB60R125CPATMA1

IR (Infineon Technologies)

MOSFET N-CH 600V 25A TO263-3

404
IPP100N06S205AKSA1

IPP100N06S205AKSA1

IR (Infineon Technologies)

MOSFET N-CH 55V 100A TO220-3

16300
IPP120N06S4H1AKSA2

IPP120N06S4H1AKSA2

IR (Infineon Technologies)

IPP120N06 - OPTIMOS N-CHANNEL

38000

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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