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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IPD50R650CEBTMA1

IPD50R650CEBTMA1

IR (Infineon Technologies)

MOSFET N-CH 500V 9A

0
BSZ025N04LSATMA1

BSZ025N04LSATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 22A/40A TSDSON

89460
SPB80P06PGATMA1

SPB80P06PGATMA1

IR (Infineon Technologies)

MOSFET P-CH 60V 80A TO263-3

0
BSC091N03MSCGATMA1

BSC091N03MSCGATMA1

IR (Infineon Technologies)

POWER FIELD-EFFECT TRANSISTOR, 1

35000
IPA60R380C6XKSA1

IPA60R380C6XKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 10.6A TO220-FP

16
IPI120N06S403AKSA1

IPI120N06S403AKSA1

IR (Infineon Technologies)

MOSFET N-CH 60V 120A TO262-3

500
IRLML2060TRPBF

IRLML2060TRPBF

IR (Infineon Technologies)

MOSFET N-CH 60V 1.2A SOT23

0
BSC050N10NS5ATMA1

BSC050N10NS5ATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 16A/100A TDSON

4930
IRFB4615PBF

IRFB4615PBF

IR (Infineon Technologies)

MOSFET N-CH 150V 35A TO220AB

447
AUIRLS8409-7P

AUIRLS8409-7P

IR (Infineon Technologies)

MOSFET N-CH 40V 240A D2PAK

829
IRL3803STRRPBF

IRL3803STRRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 140A D2PAK

0
BSC159N10LSFGATMA1

BSC159N10LSFGATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 9.4A/63A TDSON

0
IPB80N03S4L-03

IPB80N03S4L-03

IR (Infineon Technologies)

IPB80N03 - 20V-40V N-CHANNEL AUT

1000
IPB26CN10N

IPB26CN10N

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

0
IAUC100N10S5N040ATMA1

IAUC100N10S5N040ATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 100A 8TDSON-34

1740
IRLL2703TRPBF

IRLL2703TRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 3.9A SOT223

0
IPB120N04S402ATMA1

IPB120N04S402ATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 120A D2PAK

778
IPB90N06S404ATMA2

IPB90N06S404ATMA2

IR (Infineon Technologies)

MOSFET N-CH 60V 90A D2PAK

9700
BSZ0909NSATMA1

BSZ0909NSATMA1

IR (Infineon Technologies)

MOSFET N-CH 34V 9A/36A 8TSDSON

8675
IRF7493TRPBF

IRF7493TRPBF

IR (Infineon Technologies)

MOSFET N-CH 80V 9.3A 8SO

11297

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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