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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IMBG120R140M1HXTMA1

IMBG120R140M1HXTMA1

IR (Infineon Technologies)

TRANS SJT N-CH 1.2KV 18A TO263

932
BSS316NH6327XTSA1

BSS316NH6327XTSA1

IR (Infineon Technologies)

MOSFET N-CH 30V 1.4A SOT23-3

39219
BSS606NH6327

BSS606NH6327

IR (Infineon Technologies)

BSS606 - 250V-600V SMALL SIGNAL

415140
IRFH7921TRPBF

IRFH7921TRPBF

IR (Infineon Technologies)

IRFH7921 - HEXFET POWER MOSFET

0
IPB65R660CFDAATMA1

IPB65R660CFDAATMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 6A D2PAK

0
AUIRFR2407TRL

AUIRFR2407TRL

IR (Infineon Technologies)

AUTOMOTIVE POWER MOSFET

2322
BSO051N03MS G

BSO051N03MS G

IR (Infineon Technologies)

MOSFET N-CH 30V 14A 8DSO

2488
BSC22DN20NS3GATMA1

BSC22DN20NS3GATMA1

IR (Infineon Technologies)

MOSFET N-CH 200V 7A TDSON-8-5

0
AUIRF1018ES

AUIRF1018ES

IR (Infineon Technologies)

AUTOMOTIVE HEXFET N CHANNEL

10917
IRFR3708TRRPBF

IRFR3708TRRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 61A DPAK

0
IRFR5505TRPBF

IRFR5505TRPBF

IR (Infineon Technologies)

MOSFET P-CH 55V 18A DPAK

0
IRFS38N20DTRLP

IRFS38N20DTRLP

IR (Infineon Technologies)

MOSFET N-CH 200V 43A D2PAK

0
IPB180N10S403ATMA1

IPB180N10S403ATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 180A TO263-7-3

10577
IRFB4410ZPBF

IRFB4410ZPBF

IR (Infineon Technologies)

MOSFET N-CH 100V 97A TO220AB

0
IPW90R500C3XKSA1

IPW90R500C3XKSA1

IR (Infineon Technologies)

MOSFET N-CH 900V 11A TO247-3

0
IPS60R400CEAKMA1

IPS60R400CEAKMA1

IR (Infineon Technologies)

CONSUMER

0
IPW65R095C7

IPW65R095C7

IR (Infineon Technologies)

MOSFET N-CH 650V 24A TO247

0
IPU60R1K5CEAKMA2

IPU60R1K5CEAKMA2

IR (Infineon Technologies)

MOSFET N-CH 600V 3.1A TO251-3

0
BSD316SNH6327XTSA1

BSD316SNH6327XTSA1

IR (Infineon Technologies)

MOSFET N-CH 30V 1.4A SOT363-6

9820
IPT60R065S7XTMA1

IPT60R065S7XTMA1

IR (Infineon Technologies)

MOSFET N-CH 600V 8A 8HSOF

1990

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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