Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
IXTA1N100P Wickmann / Littelfuse	MOSFET N-CH 1000V 1A TO263	0
IXFN110N85X Wickmann / Littelfuse	MOSFET N-CH 850V 110A SOT227B	111590
IXFP22N65X2 Wickmann / Littelfuse	MOSFET N-CH 650V 22A TO220	50
IXTT80N20L Wickmann / Littelfuse	MOSFET N-CH 200V 80A TO268	77360
IXFK360N15T2 Wickmann / Littelfuse	MOSFET N-CH 150V 360A TO264AA	299425
IXTT110N10L2 Wickmann / Littelfuse	MOSFET N-CH 100V 110A TO268	0
IXTP50N20PM Wickmann / Littelfuse	MOSFET N-CH 200V 20A TO220	38
IXFA60N25X3 Wickmann / Littelfuse	MOSFET N-CH 250V 60A TO263AA	921250
IXTP24N65X2M Wickmann / Littelfuse	MOSFET N-CH 650V 24A TO220	0
IXTH24N50 Wickmann / Littelfuse	MOSFET N-CH 500V 24A TO247	243
IXTT240N15X4HV Wickmann / Littelfuse	MOSFET N-CH 150V 240A TO268HV	80690
IXTA340N04T4-7 Wickmann / Littelfuse	MOSFET N-CH 40V 340A TO263-7	0
IXFT50N20 Wickmann / Littelfuse	MOSFET N-CH 200V 50A TO268	0
IXFH50N60P3 Wickmann / Littelfuse	MOSFET N-CH 600V 50A TO247AD	0
IXFK80N60P3 Wickmann / Littelfuse	MOSFET N-CH 600V 80A TO264AA	121
IXFH44N50P Wickmann / Littelfuse	MOSFET N-CH 500V 44A TO247AD	0
IXTK200N10L2 Wickmann / Littelfuse	MOSFET N-CH 100V 200A TO264	398
IXFN150N65X2 Wickmann / Littelfuse	MOSFET N-CH 650V 145A SOT227B	0
IXTH150N15X4 Wickmann / Littelfuse	MOSFET N-CH 150V 150A TO247	571200
IXTX17N120L Wickmann / Littelfuse	MOSFET N-CH 1200V 17A PLUS247-3	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS