Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
IXTN90P20P Wickmann / Littelfuse	MOSFET P-CH 200V 90A SOT227B	50
IXTQ170N10P Wickmann / Littelfuse	MOSFET N-CH 100V 170A TO3P	60510
IXTP48N20T Wickmann / Littelfuse	MOSFET N-CH 200V 48A TO220AB	350
IXFR32N100P Wickmann / Littelfuse	MOSFET N-CH 1000V 18A ISOPLUS247	0
IXFK220N17T2 Wickmann / Littelfuse	MOSFET N-CH 170V 220A TO264AA	15175
IXTH80N20L Wickmann / Littelfuse	MOSFET N-CH 200V 80A TO247	69
IXFH10N100P Wickmann / Littelfuse	MOSFET N-CH 1000V 10A TO247AD	251110
IXFX140N25T Wickmann / Littelfuse	MOSFET N-CH 250V 140A PLUS247-3	960
IXTA52P10P Wickmann / Littelfuse	MOSFET P-CH 100V 52A TO263	0
IXTH1N250 Wickmann / Littelfuse	MOSFET N-CH 2500V 1.5A TO-247AD	0
IXTT60N20L2 Wickmann / Littelfuse	MOSFET N-CH 200V 60A TO268	180
IXTP86N20X4 Wickmann / Littelfuse	MOSFET 200V 86A N-CH ULTRA TO220	1000
IXFX44N80Q3 Wickmann / Littelfuse	MOSFET N-CH 800V 44A PLUS247-3	720
IXFA80N25X3TRL Wickmann / Littelfuse	MOSFET N-CH 250V 80A TO263	0
IXFQ94N30P3 Wickmann / Littelfuse	MOSFET N-CH 300V 94A TO3P	510
IXTA76N25T-TRL Wickmann / Littelfuse	MOSFET N-CH 250V 76A TO263	800
IXTA220N04T2-7 Wickmann / Littelfuse	MOSFET N-CH 40V 220A TO263-7	0
IXTQ74N20P Wickmann / Littelfuse	MOSFET N-CH 200V 74A TO3P	30870
IXFH18N100Q3 Wickmann / Littelfuse	MOSFET N-CH 1000V 18A TO247AD	961230
IXTH48N65X2 Wickmann / Littelfuse	MOSFET N-CH 650V 48A TO247	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS