Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
IXFH12N120P Wickmann / Littelfuse	MOSFET N-CH 1200V 12A TO247AD	0
IXTK120N65X2 Wickmann / Littelfuse	MOSFET N-CH 650V 120A TO264	86100
IXFH26N50P Wickmann / Littelfuse	MOSFET N-CH 500V 26A TO247AD	0
IXTY2N65X2 Wickmann / Littelfuse	MOSFET N-CH 650V 2A TO252	90
IXFP36N20X3M Wickmann / Littelfuse	MOSFET N-CH 200V 36A TO220	0
IXTH88N30P Wickmann / Littelfuse	MOSFET N-CH 300V 88A TO247	33
IXTP100N15X4 Wickmann / Littelfuse	MOSFET N-CH 150V 100A TO220	1401600
IXFR64N60P Wickmann / Littelfuse	MOSFET N-CH 600V 36A ISOPLUS247	30150
IXFR30N60P Wickmann / Littelfuse	MOSFET N-CH 600V 15A ISOPLUS247	0
IXFA50N20X3 Wickmann / Littelfuse	MOSFET N-CH 200V 50A TO263	1100
IXFQ50N50P3 Wickmann / Littelfuse	MOSFET N-CH 500V 50A TO3P	0
MMIX1F520N075T2 Wickmann / Littelfuse	MOSFET N-CH 75V 500A 24SMPD	0
IXTA4N65X2 Wickmann / Littelfuse	MOSFET N-CH 650V 4A TO263	3600
IXTP16N50P Wickmann / Littelfuse	MOSFET N-CH 500V 16A TO220AB	300800
IXTA62N15P Wickmann / Littelfuse	MOSFET N-CH 150V 62A TO263	1152050
IXFH22N60P3 Wickmann / Littelfuse	MOSFET N-CH 600V 22A TO247AD	4664300
IXFK44N50P Wickmann / Littelfuse	MOSFET N-CH 500V 44A TO264AA	208
IXFN70N60Q2 Wickmann / Littelfuse	MOSFET N-CH 600V 70A SOT-227B	43
IXTQ96N25T Wickmann / Littelfuse	MOSFET N-CH 250V 96A TO3P	930
IXFP220N06T3 Wickmann / Littelfuse	MOSFET N-CH 60V 220A TO220AB	501800

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS