Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
IXTA10P50P-TRL Wickmann / Littelfuse	MOSFET P-CH 500V 10A TO263	33
IXTP150N15X4 Wickmann / Littelfuse	MOSFET N-CH 150V 150A TO220	121750
IXFN420N10T Wickmann / Littelfuse	MOSFET N-CH 100V 420A SOT227B	29
IXTA20N65X2 Wickmann / Littelfuse	MOSFET N-CH 650V 20A TO263	1200
IXTH16N20D2 Wickmann / Littelfuse	MOSFET N-CH 200V 16A TO247	0
IXFA72N30X3 Wickmann / Littelfuse	MOSFET N-CH 300V 72A TO263AA	231
IXTN210P10T Wickmann / Littelfuse	MOSFET P-CH 100V 210A SOT227B	35
IXFK64N50Q3 Wickmann / Littelfuse	MOSFET N-CH 500V 64A TO264AA	0
IXFX120N25P Wickmann / Littelfuse	MOSFET N-CH 250V 120A PLUS247-3	0
IXTP60N10T Wickmann / Littelfuse	MOSFET N-CH 100V 60A TO220AB	515
IXTA1R6N100D2-TRL Wickmann / Littelfuse	MOSFET N-CH 1000V 1.6A TO263	0
IXFH76N15T2 Wickmann / Littelfuse	MOSFET N-CH 150V 76A TO247	1260
IXFP16N60P3 Wickmann / Littelfuse	MOSFET N-CH 600V 16A TO220	0
IXTH130N15X4 Wickmann / Littelfuse	MOSFET N-CH 150V 130A TO247	861320
IXTY18P10T Wickmann / Littelfuse	MOSFET P-CH 100V 18A TO252	3150
IXFK94N50P2 Wickmann / Littelfuse	MOSFET N-CH 500V 94A TO264AA	25
IXTR48P20P Wickmann / Littelfuse	MOSFET P-CH 200V 30A ISOPLUS247	151140
IXFT100N30X3HV Wickmann / Littelfuse	MOSFET N-CH 300V 100A TO268HV	120360
IXTH04N300P3HV Wickmann / Littelfuse	MOSFET N-CH 3000V 400MA TO247HV	0
IXTQ26P20P Wickmann / Littelfuse	MOSFET P-CH 200V 26A TO3P	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS